Press Release

Ref. RIR/SEC/13933/2026 16th September, 2026 Bombay Stock Exchange Limited The Manager – Listing Department Corporate Relationship Department, National Stock Exchange of India Ltd., 1st Floor, Rotunda Building, Exchange Plaza, C-1, G-Block, P. J. Towers, Dalal Street, Bandra Kurla Complex, Bandra (East), Mumbai-400001 Mumbai - 400051 BSE SCRIP Code : 517035 NSE Symbol : RIR Sub.: Submission of Press Release : RIR Power Electronics Completes Installation of State-of-the-Art SiC Epitaxial Wafer Manufacturing Reactors at Bhubaneswar, Odisha Facility Dear Sir/Madam, With reference to the above subject, please find enclosed herewith Press Release on the subject “RIR Power Electronics Completes Installation of State-of-the-Art SiC Epitaxial Wafer Manufacturing Reactors at Bhubaneswar, Odisha Facility” Kindly take the same on record. Thanking you. Yours faithfully, For RIR POWER ELECTRONICS LIMITED BHAVIN P RAMBHIA COMPANY SECRETARY Encl : a/a RIR Power Electronics Completes Installation of State-of-the-Art SiC Epitaxial Wafer Manufacturing Reactors at Bhubaneswar, Odisha Facility Mumbai, September 16, 2026: RIR Power Electronics Limited (BSE: 517035; NSE: RIR), one of India’s leading manufacturers of high-power semiconductor devices and power electronics solutions, has completed the erection and installation of state-of-the-art Silicon Carbide (SiC) Epitaxial Wafer Manufacturing Reactors at its SiC semiconductor facility in Bhubaneswar, Odisha. The development marks a significant milestone in the Company’s plans to establish India’s first vertically integrated SiC semiconductor production facility in Bhubaneswar, Odisha, strengthening its commitment to developing advanced semiconductor manufacturing capabilities in India. Today, on September 16, 2026, the readiness of the facility was witnessed by Shri Vishal Dev, Additional Chief Secretary, Government of Odisha & senior officials. Shri Vishal Dev, Additional Chief Secretary, Government of Odisha: “This milestone reflects Odisha’s growing role in India’s semiconductor ambitions and is fully aligned with the Hon’ble Prime Minister’s vision of Viksit Bharat. We are proud that RIR Power Electronics has chosen Odisha to build India’s first vertically integrated SiC semiconductor facility, and the State Government remains committed to supporting every step of this journey towards a self-reliant, technologically advanced India.” The facility is expected to commence commercial production upon completion of the remaining statutory and regulatory formalities. The key equipment required for the SiC epitaxial wafer manufacturing process has been installed, while essential power connections, utilities and other supporting infrastructure have been commissioned and are in place. The completion of these critical infrastructure elements represents an important step towards operationalising the facility. The facility will deliver India’s first SiC Epitaxial wafers for domestic and global markets. The SiC Epitaxial Manufacturing Reactors and associated infrastructure form part of the Company’s phased development of its Odisha semiconductor facility, supporting RIR Power Electronics’ planned ₹618 crore investment towards establishing a vertically integrated SiC semiconductor manufacturing ecosystem. The facility is being developed with the objective of manufacturing advanced SiC-based power semiconductor devices, including high-power MOSFETs, diodes and modules, catering to the growing requirements of strategic and high- growth sectors. SiC semiconductor technology offers significant advantages in terms of higher energy efficiency, improved power handling, reduced power losses, higher operating temperatures and enhanced switching performance compared with conventional silicon-based technologies. These capabilities make SiC increasingly important for applications across electric mobility, renewable energy, energy storage, railways, aerospace, defence, data centres, industrial power electronics and automation. The Company remains firmly committed to the “Make in India” and “Atmanirbhar Bharat” initiatives and aims to contribute to strengthening of India’s domestic semiconductor ecosystem. The investment is also expected to support Odisha’s emergence as an important hub in India’s semiconductor value chain, by enabling advanced manufacturing capabilities and supporting downstream applications across multiple strategic and industrial sectors. This milestone reflects the Company’s “Silicon Carbide to System” approach to semiconductor manufacturing, under which the SiC Epitaxial (EPI) process forms the foundational first step in a fully integrated value chain – progressing from epitaxial wafers to power semiconductor devices and, eventually, system-level solutions. About RIR Power Electronics Limited : RIR Power Electronics Limited (BSE: 517035, NSE: RIR) is a global pioneer in high-power semiconductor solutions, driving innovation and energy efficiency. Its portfolio of high-performance semiconductor devices, assemblies, and energy management systems enables customers to address the evolving demands of modern energy systems. The company's innovative products and solutions empower energy performance at the highest level in both existing and emerging applications. Trusted worldwide for reliability and performance, RIR stands at the forefront of sustainable energy innovation, powering progress, one breakthrough at a time. For more information, visit RIR website at www.rirpowersemi.com. Contact details: Investor relations Abhishek Savant Ketan Netawate Veritas Reputation PR Pvt Ltd Veritas Reputation PR Pvt Ltd ketan.netawate@veritasreputation.com abhishek@veritasreputation.com +91 88570 92518 +91 810 88488 22